PhD on in-situ MOVPE growth studies of nitride-based semiconductors by synchrotron analytical methods

The group-III-nitrides are of high interest for modern optoelectronic devices such as lasers, LEDs and single photon-emitters. Challenging problems are the growth in semi-polar and non-polar directions, the formation process of quantum dots, the material diffusion at interfaces during the growth, the nucleation process on different substrates (silicon) or the nucleation of different nitrides (for example AlGaN or AlN on sapphire).
The candidate will study the MOVPE growth of nitride-based structures (AlGaN layers and InGaN quantum dots) on polar, non-polar and semi-polar substrates. The growth will be performed at the new MOVPE laboratory of the ANKA Labs and has special focus on in-situ growth and characterization studies by use of in-situ X-ray scattering and spectroscopic techniques at the NANO-beamline of the ANKA synchrotron radiation facility, in comparison to ex-situ microscopy methods.

Weitere Informationen

Unternehmen

Helmholtz Gemeinschaft

Bereich/Abteilung

Institute for Photon Science and Synchrotron Radiation (IPS)

Abschlussart

Bachelorarbeit

Branche

Forschung und Entwicklung

Schlagwörter

spectroscopic techniques InGaN quantum dots AlGaN layers MOVPE group-III-nitrides optoelectronics Python C++ C Matlab crystallography semiconductor physics Halbleiter Chemie Physik

Anforderungen

Candidates should have completed their Master/Diploma in physics or chemistry. Basic knowledge of semiconductor physics and crystallography is required. Candidates should speak fluently English. Programming skills, in Matlab, C, C++, and/or Python, are advantageous.

Zusatzinformationen

Karlsruher Institut für Technologie

Vertragsdauer: befristet up to 3 years

Eintrittstermin: as soon as possible

Bewerbung bis: 31.01.2015

Ansprechpartner/in für fachliche Fragen: Fachliche Auskünfte erteilt Ihnen gerne Prof. Tilo Baumbach (tilo.baumbach@kit.edu)